The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates
Identifieur interne : 002300 ( Main/Repository ); précédent : 002299; suivant : 002301The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates
Auteurs : RBID : Pascal:11-0133511Descripteurs français
- Pascal (Inist)
- Méthode MOCVD, Mécanisme croissance, Alliage ternaire, Réaction dirigée, Semiconducteur III-V, Composé III-V, Ammoniac, Couche épitaxique, Saphir, Morphologie surface, Indium, Résultat expérimental, Réaction chimique, Rugosité, Nitrure de gallium, Croissance latérale, Taux croissance, Relaxation contrainte, Propriété mécanique, Composé de l'indium, Composé ternaire, Substrat GaN, AlInN, GaN, NH3, In, 8115G, 8110A.
English descriptors
- KwdEn :
- Ammonia, Chemical reactions, Epitaxial layers, Experimental result, Gallium nitride, Growth mechanism, Growth rate, III-V compound, III-V semiconductors, Indium, Indium compounds, Lateral growth, MOCVD, Mechanical properties, Roughness, Sapphire, Stress relaxation, Surface morphology, Template reaction, Ternary alloys, Ternary compounds.
Abstract
We have studied the growth of AlInN lattice matched to GaN. We present the effect of reactor pressures, ammonia flux, total nitrogen gas flow, and the presence of hydrogen on the growth of Al-rich Al1-xInxN epilayers (x < 0.2) on GaN templates on (0 0 0 1) sapphires by MOCVD. The reactor pressure is found to be a critical parameter not only for the surface morphology but also for indium incorporation. Our experimental result ascertains that the main controlling factor associated with the pressure is the chemical parasitic reaction. With an increase in NH3 flux from 2.5 to 5 slm, the surface roughness has substantially improved from 8.3 to 2.3 nm and the V-pit density has reduced from 7.2×108 to 3.2 × 108 cm-2. This significant improvement is ascribed to the enhanced lateral growth rate induced by the raised V/III ratio. The effects of hydrogen with different flow rates during the growth of ˜200 nm-thick Al1-xInxN epilayers have been investigated with respect to the surface morphology, bulk crystalline quality, indium incorporation and strain relaxation.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The influence of various MOCVD parameters on the growth of Al<sub>1-x</sub>In<sub>x</sub>N ternary alloy on GaN templates</title><author><name sortKey="Kim Chauveau, H" uniqKey="Kim Chauveau H">H. Kim-Chauveau</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue B. Gregory</s1><s2>06560 Valbonne Sophia Antipolis</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Valbonne Sophia Antipolis</settlement></placeName></affiliation></author><author><name sortKey="De Mierry, P" uniqKey="De Mierry P">P. De Mierry</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue B. Gregory</s1><s2>06560 Valbonne Sophia Antipolis</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Valbonne Sophia Antipolis</settlement></placeName></affiliation></author><author><name sortKey="Chauveau, J M" uniqKey="Chauveau J">J.-M. Chauveau</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue B. Gregory</s1><s2>06560 Valbonne Sophia Antipolis</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Valbonne Sophia Antipolis</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>University of Nice Sophia Antipolis, Parc Valrose</s1><s2>06102 Nice</s2><s3>FRA</s3><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Nice</settlement></placeName></affiliation></author><author><name sortKey="Duboz, J Y" uniqKey="Duboz J">J.-Y. Duboz</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue B. Gregory</s1><s2>06560 Valbonne Sophia Antipolis</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Valbonne Sophia Antipolis</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0133511</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0133511 INIST</idno><idno type="RBID">Pascal:11-0133511</idno><idno type="wicri:Area/Main/Corpus">003533</idno><idno type="wicri:Area/Main/Repository">002300</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ammonia</term><term>Chemical reactions</term><term>Epitaxial layers</term><term>Experimental result</term><term>Gallium nitride</term><term>Growth mechanism</term><term>Growth rate</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium</term><term>Indium compounds</term><term>Lateral growth</term><term>MOCVD</term><term>Mechanical properties</term><term>Roughness</term><term>Sapphire</term><term>Stress relaxation</term><term>Surface morphology</term><term>Template reaction</term><term>Ternary alloys</term><term>Ternary compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Méthode MOCVD</term><term>Mécanisme croissance</term><term>Alliage ternaire</term><term>Réaction dirigée</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Ammoniac</term><term>Couche épitaxique</term><term>Saphir</term><term>Morphologie surface</term><term>Indium</term><term>Résultat expérimental</term><term>Réaction chimique</term><term>Rugosité</term><term>Nitrure de gallium</term><term>Croissance latérale</term><term>Taux croissance</term><term>Relaxation contrainte</term><term>Propriété mécanique</term><term>Composé de l'indium</term><term>Composé ternaire</term><term>Substrat GaN</term><term>AlInN</term><term>GaN</term><term>NH3</term><term>In</term><term>8115G</term><term>8110A</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have studied the growth of AlInN lattice matched to GaN. We present the effect of reactor pressures, ammonia flux, total nitrogen gas flow, and the presence of hydrogen on the growth of Al-rich Al<sub>1-x</sub>In<sub>x</sub>N epilayers (x < 0.2) on GaN templates on (0 0 0 1) sapphires by MOCVD. The reactor pressure is found to be a critical parameter not only for the surface morphology but also for indium incorporation. Our experimental result ascertains that the main controlling factor associated with the pressure is the chemical parasitic reaction. With an increase in NH<sub>3</sub> flux from 2.5 to 5 slm, the surface roughness has substantially improved from 8.3 to 2.3 nm and the V-pit density has reduced from 7.2×10<sup>8</sup> to 3.2 × 10<sup>8</sup> cm<sup>-2</sup>. This significant improvement is ascribed to the enhanced lateral growth rate induced by the raised V/III ratio. The effects of hydrogen with different flow rates during the growth of ˜200 nm-thick Al<sub>1-x</sub>In<sub>x</sub>N epilayers have been investigated with respect to the surface morphology, bulk crystalline quality, indium incorporation and strain relaxation.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>316</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The influence of various MOCVD parameters on the growth of Al<sub>1-x</sub>In<sub>x</sub>N ternary alloy on GaN templates</s1></fA08><fA11 i1="01" i2="1"><s1>KIM-CHAUVEAU (H.)</s1></fA11><fA11 i1="02" i2="1"><s1>DE MIERRY (P.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHAUVEAU (J.-M.)</s1></fA11><fA11 i1="04" i2="1"><s1>DUBOZ (J.-Y.)</s1></fA11><fA14 i1="01"><s1>Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue B. Gregory</s1><s2>06560 Valbonne Sophia Antipolis</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>University of Nice Sophia Antipolis, Parc Valrose</s1><s2>06102 Nice</s2><s3>FRA</s3><sZ>3 aut.</sZ></fA14><fA20><s1>30-36</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000194405520070</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>28 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0133511</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We have studied the growth of AlInN lattice matched to GaN. We present the effect of reactor pressures, ammonia flux, total nitrogen gas flow, and the presence of hydrogen on the growth of Al-rich Al<sub>1-x</sub>In<sub>x</sub>N epilayers (x < 0.2) on GaN templates on (0 0 0 1) sapphires by MOCVD. The reactor pressure is found to be a critical parameter not only for the surface morphology but also for indium incorporation. Our experimental result ascertains that the main controlling factor associated with the pressure is the chemical parasitic reaction. With an increase in NH<sub>3</sub> flux from 2.5 to 5 slm, the surface roughness has substantially improved from 8.3 to 2.3 nm and the V-pit density has reduced from 7.2×10<sup>8</sup> to 3.2 × 10<sup>8</sup> cm<sup>-2</sup>. This significant improvement is ascribed to the enhanced lateral growth rate induced by the raised V/III ratio. The effects of hydrogen with different flow rates during the growth of ˜200 nm-thick Al<sub>1-x</sub>In<sub>x</sub>N epilayers have been investigated with respect to the surface morphology, bulk crystalline quality, indium incorporation and strain relaxation.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15G</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A10A</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Méthode MOCVD</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>MOCVD</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Alliage ternaire</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Ternary alloys</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Réaction dirigée</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Template reaction</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Reacción dirigida</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Composé III-V</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>III-V compound</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Ammoniac</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Ammonia</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Couche épitaxique</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Epitaxial layers</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Saphir</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Sapphire</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Morphologie surface</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Surface morphology</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Résultat expérimental</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Experimental result</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Resultado experimental</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Réaction chimique</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Chemical reactions</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Rugosité</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Roughness</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Croissance latérale</s0><s5>29</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Lateral growth</s0><s5>29</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Crecimiento lateral</s0><s5>29</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Taux croissance</s0><s5>30</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Growth rate</s0><s5>30</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Relaxation contrainte</s0><s5>31</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Stress relaxation</s0><s5>31</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Propriété mécanique</s0><s5>32</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Mechanical properties</s0><s5>32</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Composé de l'indium</s0><s5>33</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Indium compounds</s0><s5>33</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>34</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>34</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Substrat GaN</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>AlInN</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>GaN</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>NH3</s0><s4>INC</s4><s5>49</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>In</s0><s4>INC</s4><s5>50</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>8115G</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>8110A</s0><s4>INC</s4><s5>72</s5></fC03><fN21><s1>087</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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